Ferroelectric domains in epitaxial PbTiO3 and BaTiO3 thin films on MgO(100)

被引:12
作者
Kim, S
Park, Y
Kang, Y
Park, W
Baik, S
Gruverman, AL
机构
[1] Sunchon Natl Univ, Dept Met Engn & Mat Sci, Sunchon 540742, South Korea
[2] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea
[3] Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 305, Japan
关键词
ferroelectric thin films; laser ablation; sputtering; ferroelectric domain;
D O I
10.1016/S0040-6090(97)00270-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Epitaxial PbTiO3 and BaTiO3 thin films were pl spared on MgO(100) by laser ablation and RF magnetron sputter deposition, respectively. X-ray diffraction (XRD), transmission electron microscopy (TEM), and atomic force microscopy (AFM) were used to investigate the ferroelectric domains in the grown films. in the PbTiO3 film, significant portions of a-domains were distributed in c-domains, which causes abundant 90 degrees domain population, On the other hand, the BaTiO3 film was mainly single c-domains without any meaningful domain structure. We attribute the difference in domain population of the two films to two reasons. One is the smaller phase transformation strain which comes from smaller tetragonality of BaTiO3, and the other is the larger compressive stress due to thermal mismatch which comes from lower T-c, of BaTiO3 than those of PbTiO3. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:249 / 253
页数:5
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