Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers

被引：95

作者：

Eckey, L

von Gfug, U

Holst, J

Hoffmann, A

Kaschner, A

Siegle, H

Thomsen, C

Schineller, B

Heime, K

Heuken, M

Schon, O

Beccard, R

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Rhein Westfal TH Aachen, Inst Halbleitertech, D-52056 Aachen, Germany

[3] AIXTRON AG, D-52072 Aachen, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 10期

关键词：

D O I：

10.1063/1.368853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The compensation of Mg-doped GaN is systematically studied by low-temperature photoluminescence and Raman spectroscopy using a series of samples with different Mg concentrations. Strongly doped samples are found to be highly compensated in electrical measurements. The compensation mechanism is directly related to the incorporation of Mg. Three different deep donor levels are found at 240+/-30, 350+/-30, and 850+/-30 meV from the conduction band, each giving rise to deep unstructured donor-acceptor pair emission. (C) 1998 American Institute of Physics. [S0021-8979(98)07420-9].

引用

页码：5828 / 5830

页数：3

共 13 条

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