Influence of magnesium doping on the structural properties of GaN layers

被引：31

作者：

Cros, A

Dimitrov, R

Angerer, H

Ambacher, O

Stutzmann, M

Christiansen, S

Albrecht, M

Strunk, HP

机构：

[1] TECH UNIV MUNICH,WALTER SCHOTTKY INST,D-85748 GARCHING,GERMANY

[2] UNIV ERLANGEN NURNBERG,LEHRSTUHL MIKROCHARAKTERISIERUNG,INST WERKSTOFFWISSENSCH,D-91058 ERLANGEN,GERMANY

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 181卷 / 03期

关键词：

D O I：

10.1016/S0022-0248(97)00288-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigate the incorporation of magnesium in gallium nitride (GaN) films deposited on (0001) sapphire (c-Al2O3) substrates by low-pressure metalorganic chemical vapor-phase deposition (MOCVD). The growth, structure and optical properties of GaN samples with a dopant concentration ranging from 10(17) to 10(21) cm(-3) have been studied using transmission electron microscopy and micro-Raman spectroscopy. The growth rate and sample quality are strongly influenced by the amount of magnesium incorporated in the sample, with the inclusion of cubic GaN on the otherwise hexagonal material and a disruption of the two-dimensional growth for the highest dopant concentrations. The presence of the cubic phase is accompanied by the formation of large triangular islands due to a local increase of growth rate for a dopant concentration exceeding 10(20) cm(-3).

引用

页码：197 / 203

页数：7

共 23 条

[1] CONDUCTIVITY CONTROL OF GAN AND FABRICATION OF UV/BLUE GAN LIGHT-EMITTING DEVICES
AKASAKI, I
AMANO, H
KOIDE, N
KOTAKI, M
MANABE, K
[J]. PHYSICA B, 1993, 185 (1-4): : 428 - 432
[2] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI)
AMANO, H
KITO, M
HIRAMATSU, K
AKASAKI, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2112 - L2114
[3] Growth of GaN/AlN by low-pressure MOCVD using triethylgallium and tritertbutylaluminium
Ambacher, O
Dimitrov, R
Lentz, D
Metzger, T
Rieger, W
Stutzmann, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1996, 167 (1-2) : 1 - 7
[4] Ambacher O, 1997, PHYS STATUS SOLIDI A, V159, P105, DOI 10.1002/1521-396X(199701)159:1<105::AID-PSSA105>3.0.CO
[5] 2-H
[6] TIME-RESOLVED SPECTROSCOPY OF ZN-DOPED AND CD-DOPED GAN
BERGMAN, P
YING, G
MONEMAR, B
HOLTZ, PO
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) : 4589 - 4592
[7] LOCAL VIBRATIONAL-MODES IN MG-DOPED GALLIUM NITRIDE
BRANDT, MS
AGER, JW
GOTZ, W
JOHNSON, NM
HARRIS, JS
MOLNAR, RJ
MOUSTAKAS, TD
[J]. PHYSICAL REVIEW B, 1994, 49 (20) : 14758 - 14761
[8] High p-type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant
Brandt, O
Yang, H
Kostial, H
Ploog, KH
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (18) : 2707 - 2709
[9] CARDONA M, 1982, TOP APPL PHYS, V50, P46
[10] HIGH-RESOLUTION DEPTH PROFILING OF LIGHT-ELEMENTS
DOLLINGER, G
FAESTERMANN, T
MAIERKOMOR, P
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 64 (1-4) : 422 - 427

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