Selective growth of Zn- and O-polar ZnO layers by plasma-assisted molecular beam epitaxy

被引：16

作者：

Minegishi, T ^{[1
]}

Yoo, J

Suzuki, H

Vashaei, Z

Inaba, K

Shim, K

Yao, T

机构：

[1] Tohoku Univ, Ctr Interdisciplinary Res, Aoba Ku, Sendai, Miyagi 9808578, Japan

[2] Changwon Natl Univ, Sch Engn, Dept Met & Mat Sci, Chang Won 641773, Kyungnam, South Korea

[3] Rigaku Corp, Xray Res Lab, Akishima, Tokyo 1968666, Japan

[4] Tohoku Univ, Inst Sci Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2005年 / 23卷 / 03期

关键词：

D O I：

10.1116/1.1861932

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The polarity of ZnO films grown on MgO/c-Al2O3 templates are successfully controlled by only varying MgO buffer layer thickness. The crystal structure of the MgO buffer on c-Al2O3 is Of wurtzite (WZ), when the MgO buffer thickness is less than 2.7 nm. As the MgO layer thickness exceeds, the crystal structure of MgO changes to rock salt (RS) structure. A ZnO layer grown on WZ-MgO results in O-polar ZnO, while the polarity of the ZnO layer grown on RS-MgO changes to Zn polar. Possible atomic configurations of the ZnO/MgO/Al2O3 interface structure are suggested. (c) 2005 American Vacuum Society.

引用

页码：1286 / 1290

页数：5

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