SiC nanofibers grown by high power microwave plasma chemical vapor deposition

被引：32

作者：

Honda, S ^{[1
]}

Baek, YG ^{[1
]}

Ikuno, T ^{[1
]}

Kohara, H ^{[1
]}

Katayama, M ^{[1
]}

Oura, K ^{[1
]}

Hirao, T ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

APPLIED SURFACE SCIENCE | 2003年 / 212卷

关键词：

SiC nanofibers; microwave plasma CVD; VLS mechanism; anisotropic etching;

D O I：

10.1016/S0169-4332(03)00118-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Silicon carbide (SiC) nanotibers have been synthesized on Si substrates covered by Ni thin films using high power microwave chemical vapor deposition (CVD). Characterization using transmission electron microscopy (TEM) combined with electron energy-dispersive X-ray spectroscopy (EDX) revealed that the resultant fibrous nanostructures were assigned to beta-SiC with high crystallinity. The formation of SiC nanofibers can be explained by the vapor liquid solid (VLS) mechanism in which precipitation of SiC occurs from the supersaturated Ni nanoparticle containing Si and C. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：378 / 382

页数：5

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