Large-scale synthesis of β-SiC nanorods in the arc-discharge

被引:84
作者
Li, YB [1 ]
Xie, SS [1 ]
Zou, XP [1 ]
Tang, DS [1 ]
Liu, ZQ [1 ]
Zhou, WY [1 ]
Wang, G [1 ]
机构
[1] Chinese Acad Sci, Inst Phys, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
基金
中国国家自然科学基金;
关键词
characterization; nanomaterials; semiconducting silicon compounds;
D O I
10.1016/S0022-0248(01)00597-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
SiC nanorods sheathed in amorphous SiO2 were synthesized in mass by an arc-discharging approach, using a SiC rod containing iron impurity as the anode, and were characterized by SEM, TEM, EDX and XRD. The prepared nanorods possess a beta -SiC crystal core with a uniform diameter of 5-20 nm and an amorphous SiO2 wrapping layer tens of nanometers in thickness, and their lengths range from hundreds of nanometers to several micrometers. A possible growth mechanism is discussed. (C) 2001 Published by Elsevier Science B.V.
引用
收藏
页码:125 / 128
页数:4
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