Design of two-dimensional photonic crystals with large absolute band gaps using a genetic algorithm

被引:126
作者
Shen, LF [1 ]
Ye, Z
He, S
机构
[1] Zhejiang Univ, State Key Lab Modern Opt Instrumentat, Ctr Opt & Electromagnet Res, Hangzhou 310027, Peoples R China
[2] Royal Inst Technol, Dept Electromagnet Theory, S-10044 Stockholm, Sweden
关键词
D O I
10.1103/PhysRevB.68.035109
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A two-stage genetic algorithm (GA) with a floating mutation probability is developed to design a two-dimensional (2D) photonic crystal of a square lattice with the maximal absolute band gap. The unit cell is divided equally into many square pixels, and each filling pattern of pixels with two dielectric materials corresponds to a chromosome consisting of binary digits 0 and 1. As a numerical example, the two-stage GA gives a 2D GaAs structure with a relative width of the absolute band gap of about 19%. After further optimization, a new 2D GaAs photonic crystal is found with an absolute band gap much larger than those reported before.
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页数:5
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