High-performance field-effect transistor based on dibenzo[d,d′]thieno[3,2-b;4,5-b′]dithiophene, an easily synthesized semiconductor with high ionization potential

被引：178

作者：

Gao, Jianhua

Li, Rongjin

Li, Liqiang

Meng, Qing

Jiang, Hui

Li, Hongxiang ^{[1
]}

Hu, Wenping

机构：

[1] Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 19期

关键词：

D O I：

10.1002/adma.200701167

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Three simple, controlled steps are all it takes to synthesize the title pentacene analogue DBTDT (see figure). The material's high ionization potential, high thermal and photostability, high mobilities, and an on/off ratio larger than 106 at a substrate temperature of ca. 36 degrees C, as reported here, suggest that DBTDT will be extremely valuable for applications in plastic organic electronics.

引用

页码：3008 / +

页数：5

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