Formation of void lattice after annealing of Ge quantum dot lattice in alumina matrix

被引：14

作者：

Pinto, S. R. C. ^{[1
]}

Rolo, A. G. ^{[1
]}

Gomes, M. J. M. ^{[1
]}

Ivanda, M. ^{[2
]}

Bogdanovic-Radovic, I. ^{[2
]}

Grenzer, J. ^{[3
]}

Muecklich, A. ^{[3
]}

Barber, D. J. ^{[4
]}

Bernstorff, S. ^{[5
]}

Buljan, M. ^{[2
]}

机构：

[1] Univ Minho, P-4710057 Braga, Portugal

[2] Rudjer Boskovic Inst, Zagreb 10000, Croatia

[3] Forschungszentrum Dresden Rossendorf eV, D-01314 Dresden, Germany

[4] Univ Essex, Phys Ctr, Colchester CO4 3SQ, Essex, England

[5] Sincrotrone Trieste, I-34012 Basovizza, Italy

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 17期

关键词：

ANODIC ALUMINA; FABRICATION; TEMPLATES; HYDROXIDE; SURFACE;

D O I：

10.1063/1.3499426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the formation of a regularly ordered void lattice with a void size of about 4 nm in an alumina matrix. The voids were formed by thermal treatment of a well-ordered three-dimensional Ge quantum dot lattice formed earlier by self-assembled growth in an alumina matrix during magnetron sputtering codeposition of Ge+Al(2)O(3). During the subsequent annealing the germanium atoms were lost from the film and so voids were produced. The positions of the voids are ordered in the same way as the Ge quantum dots that were present before annealing, while their sizes can be controlled by the deposition parameters. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3499426]

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页数：3

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