Generation of an ordered Ge quantum dot array in an amorphous silica matrix by ion beam irradiation: Modeling and structural characterization

被引：20

作者：

Buljan, M. ^{[1
,2
]}

Bogdanovic-Radovic, I. ^{[2
]}

Karlusic, M. ^{[2
]}

Desnica, U. V. ^{[2
]}

Radic, N. ^{[2
]}

Skukan, N. ^{[2
]}

Drazic, G. ^{[3
]}

Ivanda, M. ^{[2
]}

Gamulin, O. ^{[4
]}

Matej, Z. ^{[1
]}

Vales, V. ^{[1
]}

Grenzer, J. ^{[5
]}

Cornelius, T. W. ^{[6
]}

Metzger, H. T. ^{[6
]}

Holy, V. ^{[1
]}

机构：

[1] Charles Univ Prague, Prague 12160, Czech Republic

[2] Rudjer Boskovic Inst, Zagreb 1000, Croatia

[3] Jozef Stefan Inst, Ljubljana 1000, Slovenia

[4] Univ Zagreb, Sch Med, Zagreb 10000, Croatia

[5] Forschungszentrum Dresden Rossendorf, D-01314 Dresden, Germany

[6] European Synchrotron Radiat Facil, F-38043 Grenoble, France

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 08期

关键词：

GERMANIUM NANOCRYSTALS; X-RAY;

D O I：

10.1103/PhysRevB.81.085321

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the generation of an ordered Ge quantum dot array in an amorphous silica matrix by ion beam irradiation. In particular we investigated the influence of the irradiation process on the nucleation of Ge clusters, on the correlations in their positions and on the crystalline quality of Ge quantum dots formed after subsequent annealing. We have developed a method for the description of the intensity of grazing-incidence x-ray small-angle scattering from irradiated multilayers, which enables a precise determination of the arrangement of quantum dots as well as their position correlation and size distribution. The analysis shows that the irradiation causes an ordering of Ge clusters along the irradiation direction, which substantially improves the correlations of the Ge dot locations in their three-dimensional array. The observed phenomena are explained and simulated by a Monte Carlo model based on the modification of local Ge density induced by ion tracks in the irradiated multilayers.

引用

页数：8

共 35 条

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