Formation of controlled semiconductor nanostructures by dense electronic excitation

被引：14

作者：

Batra, Y. ^{[1
]}

Mohanty, T. ^{[2
]}

Kanjilal, D. ^{[1
]}

机构：

[1] Inter Univ Accelerator Ctr, New Delhi 110067, India

[2] Jawaharlal Nehru Univ, Sch Phys Sci, New Delhi 110067, India

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2008年 / 266卷 / 12-13期

关键词：

ion beam synthesis; nanocrystals; phase separation; implantation;

D O I：

10.1016/j.nimb.2008.03.235

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ion beams at varied energies have been used as versatile and powerful technique for synthesizing nanophases of materials on and near the surface region of a variety of host matrices. An overview of recent developments regarding fabrication of semiconductor nanoparticles using energetic ion beams is presented. Results of new initiatives on the production of group IV (Si and Ge) nanostructures of desired size by high-energy heavy ions are discussed. Controlled crystallization in the nanometer scale takes place around the trajectory of the swift heavy ion passing through the host matrix. Nanoparticles with specific phases can be formed in a controlled manner by dense electronic excitation due to melting and subsequent fast cooling of the region along the trajectories of the ion beams. (c) 2008 Elsevier B.V. All rights reserved.

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收藏

页码：3107 / 3112

页数：6

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