Ion-beam-induced phase separation in GeOx thin films

被引：15

作者：

Batra, Y. ^{[1
]}

Kabiraj, D. ^{[1
]}

Kumar, S. ^{[1
]}

Kanjilal, D. ^{[1
]}

机构：

[1] Inter Univ Accelerator Ctr, New Delhi 110067, India

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2007年 / 40卷 / 15期

关键词：

D O I：

10.1088/0022-3727/40/15/029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Irradiation of thin films of sub stoichiometric germanium oxide (GeOx) has been carried out using swift heavy ions. Micro-Raman studies of the films indicate the formation of Ge crystallites as a result of irradiation. Moreover, crystallinity of Ge improves with an increase in fluence. Glancing angle x-ray diffraction results also confirm the presence of Ge crystallites in the irradiated samples. Fourier transformed infrared spectroscopy was employed to study the Ge-O-Ge vibrational structure before and after irradiation. Formation of Ge crystallites has been explained on the basis of the phenomenon of ion-beam-induced phase separation.

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页码：4568 / 4570

页数：3

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