Structure and photoluminescence properties of evaporated GeOx thin films

被引：68

作者：

Ardyanian, M. ^{[1
]}

Rinnert, H. ^{[1
]}

Devaux, X. ^{[1
]}

Vergnat, M. ^{[1
]}

机构：

[1] Univ Nancy 1, CNRS, UMR 7556, Phys Mat Lab, F-54506 Vandoeuvre Les Nancy, France

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 01期

关键词：

D O I：

10.1063/1.2218830

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous GeOx alloys were prepared by evaporation of GeO2 powder on substrates maintained at 100 degrees C. The evolution of the structure was investigated by infrared-absorption spectrometry, Raman spectrometry and transmission electron microscopy experiments for annealing temperatures less than 600 degrees C. These experiments allowed us to follow the phase separation of the alloy and to observe the appearance of amorphous and crystallized Ge aggregates. The evolution of the photoluminescence in the range of 560-1550 nm was correlated to the structure of the films. (c) 2006 American Institute of Physics.

引用

页数：3

共 19 条

[1] Growth and characterization of GeO2 films obtained by plasma anodization of epitaxial Ge films [J].

Busani, T ;

Plantier, H ;

Devine, RAB ;

Hernandez, C ;

Campidelli, Y .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :4262-4264

[2] Growth kinetics and physical characterisation of Si1-xGexO2 films obtained by plasma assisted oxidation [J].

Busani, T ;

Plantier, H ;

Devine, RAB ;

Hernandez, C ;

Campidelli, Y .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1999, 254 :80-88

[3] Spectroscopic ellipsometry analyses of sputtered Si/SiO2 nanostructures [J].

Charvet, S ;

Madelon, R ;

Gourbilleau, F ;

Rizk, R .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :4032-4039

[4] ROOM-TEMPERATURE 1.5 MU-M LUMINESCENCE OF CO-DEPOSITED ERBIUM AND GERMANIUM [J].

CHEN, JH ;

PANG, D ;

CHEONG, HM ;

WICKBOLDT, P ;

PAUL, W .

APPLIED PHYSICS LETTERS, 1995, 67 (15) :2182-2184

[5] RAMAN, TRANSMISSION ELECTRON-MICROSCOPY, AND CONDUCTIVITY MEASUREMENTS IN MOLECULAR-BEAM DEPOSITED MICROCRYSTALLINE SI AND GE - A COMPARATIVE-STUDY [J].

GONZALEZHERNANDEZ, J ;

AZARBAYEJANI, GH ;

TSU, R ;

POLLAK, FH .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1350-1352

[6]

IWAYAMA TS, 1994, J APPL PHYS, V75, P7779

[7] Simultaneous micro-Raman and photoluminescence study of spark-processed germanium: Report on the origin of the orange photoluminescence emission band [J].

Kartopu, G ;

Bayliss, SC ;

Hummel, RE ;

Ekinci, Y .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (07) :3466-3472

[8] The origin of photoluminescence from thin films of silicon-rich silica [J].

Kenyon, AJ ;

Trwoga, PF ;

Pitt, CW ;

Rehm, G .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (12) :9291-9300

[9] CHEMICAL BONDING OF HYDROGEN AND OXYGEN IN GLOW-DISCHARGE - DEPOSITED THIN-FILMS OF A-GE-H AND A-GE-(H,O) [J].

LUCOVSKY, G ;

CHAO, SS ;

YANG, J ;

TYLER, JE ;

ROSS, RC ;

CZUBATYJ, W .

PHYSICAL REVIEW B, 1985, 31 (04) :2190-2197

[10] Visible photoluminescence in amorphous SiOx thin films prepared by silicon evaporation under a molecular oxygen atmosphere [J].

Molinari, M ;

Rinnert, H ;

Vergnat, M .

APPLIED PHYSICS LETTERS, 2003, 82 (22) :3877-3879

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