Formation of long-range ordered quantum dots arrays in amorphous matrix by ion beam irradiation

被引：23

作者：

Buljan, M. ^{[1
,2
]}

Bogdanovic-Radovic, I. ^{[2
]}

Karlusic, M. ^{[2
]}

Desnica, U. V. ^{[2
]}

Drazic, G. ^{[3
]}

Radic, N. ^{[2
]}

Dubcek, P. ^{[2
]}

Salamon, K. ^{[4
]}

Bernstorff, S. ^{[5
]}

Holy, V. ^{[1
]}

机构：

[1] Charles Univ Prague, Prague 12116, Czech Republic

[2] Rudjer Boskovic Inst, Zagreb 10000, Croatia

[3] Jozef Stefan Inst, Ljubljana 1000, Slovenia

[4] Inst Phys, Zagreb 10000, Croatia

[5] Sincrotrone Trieste, I-34012 Basovizza, Italy

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 06期

关键词：

amorphous state; annealing; chemical interdiffusion; elemental semiconductors; germanium; ion beam effects; multilayers; nucleation; semiconductor quantum dots; semiconductor thin films; silicon compounds; NANOSTRUCTURES; NANOCRYSTALS; CRYSTALS; GROWTH;

D O I：

10.1063/1.3204007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the production of a well ordered three-dimensional array of Ge quantum dots in amorphous silica matrix. The ordering is achieved by ion beam irradiation and annealing of a multilayer film. Structural analysis shows that quantum dots nucleate along the direction of the ion beam used for irradiation, while the mutual distance of the quantum dots is determined by the diffusion properties of the multilayer material rather than the distances between traces of ions that are used for irradiation.

引用

页数：3

共 15 条

[1] Semiconductor clusters, nanocrystals, and quantum dots [J].