Studies of Na-segregation at Ni/alpha-quartz interfaces

被引：4

作者：

Haussalo, P

Lieb, KP

Bolse, W

Illgner, C

Keinonen, J

机构：

[1] UNIV GOTTINGEN,INST PHYS 2,D-3400 GOTTINGEN,GERMANY

[2] UNIV GOTTINGEN,SONDERFORSCH BEREICH 345,D-3400 GOTTINGEN,GERMANY

[3] UNIV HELSINKI,ACCELERATOR LAB,FIN-00014 HELSINKI,FINLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 120卷 / 1-4期

基金：

芬兰科学院;

关键词：

D O I：

10.1016/S0168-583X(96)00523-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ni/alpha-quartz bilayers were irradiated at 77 K with 200 keV Na+ ions at a fluence of 5 x 10(16) ions/cm(2) and annealed in hydrogen up to 883 K. The Na-migration at the Ni/alpha-quartz interface and towards the Ni-surface, the hydrogen storage in the irradiated region, and the Ni/alpha-quartz interface broadening due to Na implantation and decoration were investigated via Rutherford Backscattering Spectrometry (RES) and Resonant Nuclear Reaction Analysis (RNRA). We demonstrate that after a one hour-annealing at 833 K a large fraction of the implanted Na has been trapped at the Ni/alpha-quartz interface from where it is released at 883 K. The results are discussed and compared with our findings in Na-irradiated metals and silicon compounds.

引用

页码：266 / 269

页数：4

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