XENON ION-INDUCED ATOMIC TRANSPORT THROUGH ALUMINUM-NITRIDE INTERFACES

被引：11

作者：

SUN, J

BOLSE, W

LIEB, KP

TRAVERSE, A

机构：

[1] CTR SPECTROMETRIE NUCL & SPECTROMETRIE MASSE,CNRS,IN2P3,F-91405 ORSAY,FRANCE

[2] ACAD SINICA,INST SOLID STATE PHYS,HEFEI 230031,PEOPLES R CHINA

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1995年 / 196卷 / 1-2期

关键词：

XENON; ATOMIC TRANSPORT; ALUMINUM-NITRIDE INTERFACES;

D O I：

10.1016/0921-5093(94)09712-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Low-temperature Xe ion mixing of CrxN (x = 1, 2) and TiN films on Al and vice versa was studied up to fluences of 2 x 10(16) Xe cm(-2). Analysis via Rutherford backscattering spectrometry at 0.9 MeV and 2.4 MeV alpha-energy and resonance nuclear reaction analysis provided the concentration profiles of all elements at the interface. All three elements located at the interface were found to be mixed at approximately the same rate and the athermal mixing process was mainly ballistic. Xe segregation at the interface was also observed.

引用

页码：229 / 236

页数：8

共 25 条

[1] ION-BEAM MIXING OF NI/PD LAYERS .1. CASCADE MIXING REGIME (LOW-TEMPERATURE) [J].