Raman Characterization of ABA- and ABC-Stacked Trilayer Graphene

被引：168

作者：

Cong, Chunxiao ^{[1
]}

Yu, Ting ^{[1
,2
]}

Sato, Kentaro ^{[3
]}

Shang, Jingzhi ^{[1
]}

Saito, Riichiro ^{[3
]}

Dresselhaus, Gene F. ^{[4
]}

Dresselhaus, Mildred S. ^{[5
,6
]}

机构：

[1] Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore 637371, Singapore

[2] Natl Univ Singapore, Fac Sci, Dept Phys, Singapore 117542, Singapore

[3] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan

[4] MIT, Francis Bitter Magnet Lab, Cambridge, MA 02139 USA

[5] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA

[6] MIT, Dept Phys, Cambridge, MA 02139 USA

来源：

ACS NANO | 2011年 / 5卷 / 11期

基金：

美国国家科学基金会; 新加坡国家研究基金会;

关键词：

graphene; Raman scattering; stacking order; electron-phonon interaction; double resonance Raman spectroscopy; SPECTROSCOPY; SCATTERING; STRAIN;

D O I：

10.1021/nn203472f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Bernal (ABA stacking order) and rhombohedral (ABC) trilayer graphene (3LG) are characterized by Raman spectroscopy. From a systematic experimental and theoretical analysis of the Raman modes in both of these 3LGs, we show that the G band, G' (20) band, and the Intermediate-frequency combination modes of 3LGs are sensitive to the stacking order of 3LG. The phonon wavevector q, that gives the double resonance Raman spectra is larger in ABC than ABA, which is the reason why we get the different Raman frequencies and their spectral widths for ABA and ABC 3LG. The weak electron-phonon Interaction in ABC-stacked 3LG and the localized strain at the boundary between ABC- and ABA-stacked domains are clearly reflected by the softening of the G mode and the G' mode, respectively.

引用

页码：8760 / 8768

页数：9

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