A nanoindentation study of copper films on oxidised silicon substrates

被引：89

作者：

Beegan, D

Chowdhury, S

Laugier, MT ^{[1
]}

机构：

[1] Univ Limerick, Dept Phys, Limerick, Ireland

[2] Univ Limerick, Mat & Surface Sci Inst, Limerick, Ireland

来源：

SURFACE & COATINGS TECHNOLOGY | 2003年 / 176卷 / 01期

关键词：

nanoindentation; atomic force microscopy (AFM); copper;

D O I：

10.1016/S0257-8972(03)00774-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The indentation hardness of copper films deposited on oxidised silicon substrates is investigated by two methods. The first uses the Oliver and Pharr method for analysing the load-displacement curves and the second involves the measurement of the residual indent impression with AFM. Material pile-up was found at the indent edges, and this area needs to be accounted for in hardness measurement. The effect of the pile-up area is investigated and the 'true' film hardness is determined. (C) 2003 Elsevier B.V. All rights reserved.

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收藏

页码：124 / 130

页数：7

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