Sources of electrical conductivity in SnO2

被引：358

作者：

Singh, Abhishek Kumar ^{[1
]}

Janotti, Anderson ^{[1
]}

Scheffler, Matthias ^{[1
,2
]}

Van de Walle, Chris G. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.101.055502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

SnO2 is widely used as a transparent conductor and sensor material. Better understanding and control of its conductivity would enhance its performance in existing applications and enable new ones, such as in light emitters. Using density functional theory, we show that the conventional attribution of n-type conductivity to intrinsic point defects is incorrect. Unintentional incorporation of hydrogen provides a consistent explanation of experimental observations. Most importantly, we find that SnO2 offers excellent prospects for p-type doping by incorporation of acceptors on the Sn site. Specific strategies for optimizing acceptor incorporation are presented.

引用

页数：4