Atomic-Scale Compensation Phenomena at Polar Interfaces

被引：144

作者：

Chisholm, Matthew F. ^{[1
]}

Luo, Weidong ^{[1
,2
]}

Oxley, Mark P. ^{[1
,2
]}

Pantelides, Sokrates T. ^{[1
,2
]}

Lee, Ho Nyung ^{[1
]}

机构：

[1] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

[2] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 19期

关键词：

FERROELECTRIC-FILMS; THIN-FILMS; POLARIZATION; ENHANCEMENT; NANOSCALE; LAYER;

D O I：

10.1103/PhysRevLett.105.197602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density-functional theory to show how interfaces cope with the need to terminate ferroelectric polarization. In one case, we show evidence for ionic screening, which has been predicted by theory but never observed. For a ferroelectric film on an insulating substrate, we found that compensation can be mediated by an interfacial charge generated, for example, by oxygen vacancies.

引用

页数：4

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