E′ centers in amorphous SiO2 revisited:: A new look at an old problem

被引:49
作者
Uchino, T [1 ]
Takahashi, M [1 ]
Yoko, T [1 ]
机构
[1] Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan
关键词
D O I
10.1103/PhysRevLett.86.5522
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present theoretical evidence that the paramagnetic E ' defect centers in amorphous silicon dioxide (a-SiO2) do not have the same microscopic structures as those well-defined in the corresponding crystalline counterparts such as a-quartz. We then present alternative models of some paramagnetic defects that account for the underlying experimental features of the E ' -center variants in a-SiO2. We suggest that our new model should take the place of the conventional defect model of a-SiO2.
引用
收藏
页码:5522 / 5525
页数:4
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