E′ centers in amorphous SiO2 revisited:: A new look at an old problem

被引：49

作者：

Uchino, T ^{[1
]}

Takahashi, M ^{[1
]}

Yoko, T ^{[1
]}

机构：

[1] Kyoto Univ, Inst Chem Res, Kyoto 6110011, Japan

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.86.5522

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present theoretical evidence that the paramagnetic E ' defect centers in amorphous silicon dioxide (a-SiO2) do not have the same microscopic structures as those well-defined in the corresponding crystalline counterparts such as a-quartz. We then present alternative models of some paramagnetic defects that account for the underlying experimental features of the E ' -center variants in a-SiO2. We suggest that our new model should take the place of the conventional defect model of a-SiO2.

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收藏

页码：5522 / 5525

页数：4

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