n-Type Organic Semiconductors in Organic Electronics

被引：1059

作者：

Anthony, John E. ^{[1
]}

Facchetti, Antonio ^{[6
]}

Heeney, Martin ^{[2
]}

Marder, Seth R. ^{[3
,4
]}

Zhan, Xiaowei ^{[5
]}

机构：

[1] Univ Kentucky, Dept Chem, Lexington, KY 40506 USA

[2] Univ London Imperial Coll Sci Technol & Med, Dept Chem, London SW7 2AZ, England

[3] Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA

[4] Georgia Inst Technol, Ctr Organ Photon & Elect, Atlanta, GA 30332 USA

[5] Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China

[6] Polyera Corp, Skokie, IL 60077 USA

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 34期

基金：

英国工程与自然科学研究理事会;

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; LIGHT-EMITTING-DIODES; POLYMER SOLAR-CELLS; OPEN-CIRCUIT VOLTAGE; HIGH-PERFORMANCE; DIIMIDE SEMICONDUCTORS; HIGHLY EFFICIENT; COMPLEMENTARY CIRCUITS; FULLERENE DERIVATIVES;

D O I：

10.1002/adma.200903628

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Organic semiconductors have been the subject of intensive academic and commercial interest over the past two decades, and successful commercial devices incorporating them are slowly beginning to enter the market. Much of the focus has been on the development of hole transporting, or p-type, semiconductors that have seen a dramatic rise in performance over the last decade. Much less attention has been devoted to electron transporting, or so called n-type, materials, and in this paper we focus upon recent developments in several classes of n-type materials and the design guidelines used to develop them.

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收藏

页码：3876 / 3892

页数：17

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