Epitaxial growth of the half-metallic ferromagnet NiMnSb on GaAs(001)

被引:17
作者
Van Roy, W [1 ]
Borghs, G [1 ]
De Boeck, J [1 ]
机构
[1] IMEC, B-3001 Louvain, Belgium
关键词
X-ray diffraction; molecular beam epitaxy; Heusler alloys; half-metals; magnetic materials; semiconducting gallium arsenide;
D O I
10.1016/S0022-0248(01)00919-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We have grown epitaxial NiMnSb(0 0 1) films on GaAs(0 0 1). NiMnSb is a half-metallic ferromagnet and a possible candidate for spin injection applications. Films grown at a Sb:Ni flux ratio phi (Sb):phi (Ni) = 7:1 have the best crystal quality and surface morphology, but show a Mn deficiency of similar to 20 at% and a reduced magnetization. Stoichiometric films show the highest magnetization and are obtained at phi (Sb):phi (Ni) = 10:1 The implication of thc twofold in-plane magnetic anisotropy, dependent on the growth conditions, on the interface structure and the spin polarization at the bottom NiMnSb surface will need further attention. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:862 / 866
页数:5
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