A spin-coherent semiconductor photo-detector for quantum communication

被引:108
作者
Vrijen, R
Yablonovitch, E [1 ]
机构
[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[2] Sun Microsyst Labs, Mt View, CA USA
来源
PHYSICA E | 2001年 / 10卷 / 04期
关键词
spin-coherent semiconductor; quantum communication; photo-detector;
D O I
10.1016/S1386-9477(00)00296-4
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We describe how quantum information may be transferred from photon polarization to electron spin in a semiconductor device. The transfer of quantum information relies on selection rules for optical transitions, such that two superposed photon polarizations excite two superposed spin states. Entanglement of the electron spin state with the spin state of the remaining hole is prevented by using a single, non-degenerate initial valence hand. The degeneracy of the valence band is lifted by the combination of strain and a static magnetic field. We give a detailed description of a semiconductor structure that transfers photon polarization to electron spin coherently, and allows electron spins to be stored and to be made available for quantum information processing. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:569 / 575
页数:7
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