Influence of the hole-transport layer on the initial behavior and lifetime of inverted organic photovoltaics

被引:102
作者
Lloyd, Matthew T. [1 ]
Peters, Craig H. [2 ]
Garcia, Andres [1 ]
Kauvar, Isaac V. [1 ,2 ]
Berry, Joseph J. [1 ]
Reese, Matthew O. [1 ]
McGehee, Michael D. [2 ]
Ginley, David S. [1 ]
Olson, Dana C. [1 ]
机构
[1] Natl Renewable Energy Lab, Natl Ctr Photovolta, Golden, CO 80401 USA
[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
关键词
Organic photovoltaics; Inverted devices; Degradation; PEDOT:PSS; Hole-transport layer; LIGHT-EMITTING-DIODES; SOLAR-CELLS; POLYMER; DEGRADATION; OXIDE; PATTERNS; KINETICS;
D O I
10.1016/j.solmat.2010.12.036
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The inverted organic photovoltaic (OPV) device architecture represents an important advancement due to the relative environmental stability of the electron transport layer (ETL) and hole-collecting contact. We investigated the initial and long-term behavior of inverted devices to identify changes taking place at the Ag hole-collecting contact. We show that efficient hole collection can be obtained after modifying the Ag contact by thermal annealing, long-term exposure to ambient atmosphere, or employing a high work function organic hole-transport layer (HTL). We find that whether or not the device employs an organic HTL, degradation of the photocurrent initially follows a simple exponential decay. After prolonged illumination (> 500 h), devices with an organic HTL fail catastrophically due to a precipitous drop in photocurrent. Based on evidence for pinhole-induced degradation observed in photocurrent maps, we propose a nucleation and island growth mechanism and a model for the photocurrent behavior employing a modified Johnson-Mehl-Avrami-Kolmogorov (JMAK) equation. Devices that do not contain an HTL appear to degrade by a mechanism other than pinhole ingress resulting in a more uniform degradation of the photocurrent across the active area. Published by Elsevier B.V.
引用
收藏
页码:1382 / 1388
页数:7
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