Polaronic effects on the resistivity of manganite thin films

被引:209
作者
Ziese, M [1 ]
Srinitiwarawong, C [1 ]
机构
[1] Univ Sheffield, Dept Phys, Sheffield S3 7RH, S Yorkshire, England
来源
PHYSICAL REVIEW B | 1998年 / 58卷 / 17期
关键词
D O I
10.1103/PhysRevB.58.11519
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The high-temperature resistivity of La0.7Ca0.3MnO3 and La0.7Ba0.3MnO3 thin films on various substrates LaAlO3, SrTiO3, and Si was investigated. We show that the intrinsic resistivity of high-quality epitaxial films in the paramagnetic phase has a thermally activated form, whereas the extrinsic resistivity found in polycrystalline films follows a variable range hopping law. The small activation energies measured are not compatible with the formation of a band gap; instead they indicate polaron hopping. The polaron mobility is drastically enhanced by the ferromagnetic ordering. We show that the reduction of the polaron activation energy below the Curie temperature is linear in the magnetization. The shift of the metal-insulator transition temperature depends sublinearly on the applied field. [S0163-1829(98)02841-0].
引用
收藏
页码:11519 / 11525
页数:7
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