Direct measurements of the spin and the cyclotron gaps in a 2D electron system in silicon

被引：17

作者：

Khrapai, VS ^{[1
]}

Shashkin, AA ^{[1
]}

Dolgopolov, VT ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.91.126404

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using magnetocapacitance data in tilted magnetic fields, we directly determine the chemical potential jump in a strongly correlated two-dimensional electron system in silicon when the filling factor traverses the spin and the cyclotron gaps. The data yield an effective g factor that is close to its value in bulk silicon and does not depend on the filling factor. The cyclotron splitting corresponds to the effective mass that is strongly enhanced at low electron densities.

引用

页码：126404 / 126404

页数：4

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