Nanocomposite Phase-Change Memory Alloys for Very High Temperature Data Retention

被引：22

作者：

Czubatyj, Wally ^{[1
]}

Hudgens, Stephen J. ^{[1
]}

Dennison, Charles ^{[1
]}

Schell, Carl ^{[1
]}

Lowrey, Tyler ^{[1
]}

机构：

[1] Ovonyx Inc, Rochester, MI 48309 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 08期

关键词：

Data retention; GeSbTe (GST); nonvolatile memories (NVMs); phase-change memory (PCM); GE2SB2TE5;

D O I：

10.1109/LED.2010.2051135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Phase-change memory alloys based on germanium, antimony, and tellurium with SiO2 nanophase dielectric inclusions are investigated for material and electrical properties. The new alloys are prepared by cosputtering with a SiO2 target creating nanophase dielectric inclusions. The addition of the dielectric inclusions significantly increases the crystallization temperature without affecting the required programming current. In memory device configurations, the nanocomposite alloys exhibit a ten-year data retention above 200 degrees C and a cycle life greater than 1 x 10(7) cycles while maintaining the SET programming speed of 250 ns.

引用

页码：869 / 871

页数：3

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