Comparative assessment of GST and GeTe Materials For Application to Embedded Phase-Change Memory Devices

被引：48

作者：

Fantini, A. ^{[1
]}

Perniola, L. ^{[1
]}

Armand, M. ^{[1
]}

Nodin, J. F. ^{[1
]}

Sousa, V. ^{[1
]}

Persico, A. ^{[1
]}

Cluzel, J. ^{[1
]}

Jahan, C. ^{[1
]}

Maitrejean, S. ^{[1
]}

Lhostis, S. ^{[2
]}

Roule, A. ^{[1
]}

Dressler, C. ^{[1
]}

Reimbold, G. ^{[1
]}

DeSalvo, B. ^{[1
]}

Mazoyer, P. ^{[2
]}

Bensahel, D. ^{[2
]}

Boulanger, F. ^{[1
]}

机构：

[1] CEA LETI Minatec, F-38054 Grenoble, France

[2] ST Microelect, Crolles, France

来源：

2009 IEEE INTERNATIONAL MEMORY WORKSHOP | 2009年

关键词：

TECHNOLOGY;

D O I：

10.1109/IMW.2009.5090585

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This work presents a thorough comparative assessment Of undoped GST and GeTe active phase-change (PC) materials for application to embedded memory devices (in particular consumer and automotive products). The material screening and qualification is performed through optical reflectivity and 4-probes resistivity measurements. Electrical performances are then investigated through tests of lance-cell analytical PC memory cells. Reset current densities of GST and GeTe are comparable, while GeTe data-retention at high-temperature is significantly improved compared to GST suggesting that GeTe-based compounds are promising candidates for embedded PC memory applications.

引用

页码：66 / +

页数：2

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