Single bath electrodeposition of CuInSe2 and Cu(In,Ga)Se2 for thin film photovoltaic cells

被引：12

作者：

Calixto, ME ^{[1
]}

Dobson, KD ^{[1
]}

McCandless, BE ^{[1
]}

Birkmire, RW ^{[1
]}

机构：

[1] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

来源：

Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 | 2005年

关键词：

D O I：

10.1109/PVSC.2005.1488148

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper, an electrodeposition (ED) process for growth of CuInSe2 and Cu(In,Ga)Se-2 films from single baths is presented. The use of buffered baths and careful selection of bath concentrations allows good control of the composition of the deposited films. Prior to cell processing, CuInSe2 and Cu(in,Ga)Se-2 films require recrystallization by annealing in H2Se/Ar. Promising results have been obtained for ED CuInSe2- and ED Cu(In,Ga)Se-2-based devices. Optimization of the selenization treatment and a better understanding of the bath chemistry and film growth mechanism are expected to lead to significant improvements in cell performance.

引用

页码：378 / 381

页数：4

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