Pinhole analysis in magnetic tunnel junctions

被引:26
作者
Schad, R [1 ]
Allen, D
Zangari, G
Zana, I
Yang, D
Tondra, M
Wang, DX
机构
[1] Univ Alabama, Dept Phys, Tuscaloosa, AL 35487 USA
[2] Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USA
[3] Univ Alabama, Dept Met & Mat Engn, Tuscaloosa, AL 35487 USA
[4] Nonvolatile Elect, Eden Prairie, MN 55344 USA
关键词
D O I
10.1063/1.125832
中图分类号
O59 [应用物理学];
学科分类号
摘要
Pinholes in the insulating layer of magnetic tunnel junctions are local shortcuts and cause malfunction of such devices. The need for reduction of the tunnel resistance by reduction of the insulator thickness will make this problem even more severe. Therefore, the development of low-resistance magnetic tunnel junctions requires analyzing the pinhole density. We developed a method for pinhole imaging using electrodeposition of copper. Selective nucleation at pinholes produces characteristic structures that can be visualized by conventional microscopy techniques. The experimental conditions were carefully chosen in order to avoid uncontrolled damage of the insulator layer. (C) 2000 American Institute of Physics. [S0003-6951(00)01905-7].
引用
收藏
页码:607 / 609
页数:3
相关论文
共 16 条
  • [1] Tunneling magnetoresistance in ferromagnetic junctions: Bias dependence
    Barnas, J
    Lee, SF
    Holody, P
    Schelp, LF
    Petroff, F
    Fert, A
    [J]. ACTA PHYSICA POLONICA A, 1998, 93 (02) : 387 - 391
  • [2] A NEW TECHNIQUE FOR DECORATION OF CLEAVAGE AND SLIP STEPS ON IONIC CRYSTAL SURFACES
    BASSETT, GA
    [J]. PHILOSOPHICAL MAGAZINE, 1958, 3 (33): : 1042 - &
  • [3] GIANT MAGNETORESISTANCE OF NANOWIRES OF MULTILAYERS
    BLONDEL, A
    MEIER, JP
    DOUDIN, B
    ANSERMET, JP
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (23) : 3019 - 3021
  • [4] Nanometric cartography of tunnel current in metal-oxide junctions
    Da Costa, V
    Bardou, F
    Béal, C
    Henry, Y
    Bucher, JP
    Ounadjela, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 6703 - 6705
  • [5] Magnetic tunneling applied to memory
    Daughton, JM
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) : 3758 - 3763
  • [6] Microstructured magnetic tunnel junctions
    Gallagher, WJ
    Parkin, SSP
    Lu, Y
    Bian, XP
    Marley, A
    Roche, KP
    Altman, RA
    Rishton, SA
    Jahnes, C
    Shaw, TM
    Xiao, G
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) : 3741 - 3746
  • [7] TUNNELING BETWEEN FERROMAGNETIC-FILMS
    JULLIERE, M
    [J]. PHYSICS LETTERS A, 1975, 54 (03) : 225 - 226
  • [8] Spin-dependent tunneling in epitaxial systems: Band dependence of conductance
    MacLaren, JM
    Butler, WH
    Zhang, XG
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) : 6521 - 6523
  • [9] LARGE MAGNETORESISTANCE AT ROOM-TEMPERATURE IN FERROMAGNETIC THIN-FILM TUNNEL-JUNCTIONS
    MOODERA, JS
    KINDER, LR
    WONG, TM
    MESERVEY, R
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (16) : 3273 - 3276
  • [10] Dielectric breakdown of ferromagnetic tunnel junctions
    Oepts, W
    Verhagen, HJ
    de Jonge, WJM
    Coehoorn, R
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (16) : 2363 - 2365