Analysis of the gate voltage fluctuations in ultra-thin gate oxides after soft breakdown

被引：19

作者：

Houssa, M ^{[1
]}

Vandewalle, N ^{[1
]}

Nigam, T ^{[1
]}

Ausloos, M ^{[1
]}

Mertens, PW ^{[1
]}

Heyns, MM ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746502

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The time-dependence of the gate voltage [V-G(t)] during constant current stress of MOS capacitors with a 2.4 nm gate oxide layer after the occurrence of soft breakdown is analysed. It is shown that the fluctuations observed in V-G(t) are non-Gaussian and can be fitted by Levy distributions. The long-range correlations in V-G(t) are investigated by using the Detrended Fluctuation Analysis (DFA). From this analysis, it is found that long-range antipersistant correlations exist in the gate voltage signal. These results can be qualitatively explained by a dynamic percolation model, taking into account the trapping-detrapping of electrons within the percolation cluster formed after the occurrence of soft breakdown.

引用

页码：909 / 912

页数：4

共 11 条

[1]

ALERS GB, 1998, P INT REL PHYS S

[2]

Degraeve R, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P863, DOI 10.1109/IEDM.1995.499353

[3] Soft breakdown of ultra-thin gate oxide layers [J].

Depas, M ;

Nigam, T ;

Heyns, MM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) :1499-1504

[4]

FEDER J, 1995, FRACTALS

[5] Soft breakdown in ultrathin gate oxides: Correlation with the percolation theory of nonlinear conductors [J].

Houssa, M ;

Nigam, T ;

Mertens, PW ;

Heyns, MM .

APPLIED PHYSICS LETTERS, 1998, 73 (04) :514-516

[6]

HOUSSA M, 1998, IN PRESS J APPL PHYS, V84

[7]

LEE SH, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P605, DOI 10.1109/IEDM.1994.383337

[8]

MEURIS M, 1995, SOLID STATE TECH JUL, P109

[9] MOSAIC ORGANIZATION OF DNA NUCLEOTIDES [J].

PENG, CK ;

BULDYREV, SV ;

HAVLIN, S ;

SIMONS, M ;

STANLEY, HE ;

GOLDBERGER, AL .

PHYSICAL REVIEW E, 1994, 49 (02) :1685-1689

[10]

Stauffer D., 2018, Introduction To Percolation Theory, Vsecond

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