Nucleation and growth of Cu films during the initial stage of chemical vapor deposition

被引:11
作者
Chae, YK [1 ]
Komiyama, H [1 ]
机构
[1] Univ Tokyo, Dept Chem Syst Engn, Tokyo 1138656, Japan
关键词
D O I
10.1063/1.1385359
中图分类号
O59 [应用物理学];
学科分类号
摘要
The nucleation and growth of Cu nanoparticles during the initial stage of film growth by chemical vapor deposition was investigated using transmission electron microscopy and energy dispersive x-ray spectroscopy analysis. Cu nanoparticles did not migrate on the SiO2 surface because the Cu nanoparticles were deposited by autocatalytic reactions onto pre-existing nuclei, and therefore were strongly bonded to the surface. The initial growth mechanism of Cu nanoparticles appears to be that Cu particles deposit by surface reaction onto pre-existing nuclei, grow to become nanoparticles, and these nanoparticles form amorphous Cu islands. The amorphous Cu islands grow to become larger islands that consist of partially-crystallized Cu. The crystallized Cu particles then begin to form on the amorphous Cu phases. With increasing deposition time, the amorphous Cu phases completely convert into crystalline phases to form a crystalline film. (C) 2001 American Institute of Physics.
引用
收藏
页码:3610 / 3613
页数:4
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