Resistivity due to domain walls in Co zigzag wires

被引：117

作者：

Taniyama, T ^{[1
]}

Nakatani, I

Namikawa, T

Yamazaki, Y

机构：

[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Yokohama, Kanagawa 2268502, Japan

[2] Natl Res Inst Met, Tsukuba, Ibaraki 3050047, Japan

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.82.2780

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report a clear manifestation of the negative magnetoresistance due to the domain wall of Co submicron zigzag wires in which the domain structures are artificially controllable by changing the orientation of the magnetic fields. The resistivity in the remanent state discontinuously drops when the domain configuration switches from the single domain to the multidomain. We attribute this to the domain wall, and deduce the decrease in the resistivity of -1.8 X 10(-6) Omega cm assuming the wall thickness of 15 nm. The origin of the negative resistive contribution due to the domain wall is also discussed compared with the existing theories. [S0031-9007(99)08782-7].

引用

页码：2780 / 2783

页数：4

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