Bismuth (Bi) nanocrystals are used for solution-liquid-solid (SLS) synthesis of crystalline InAs, GaP, GaAs, and InP nanowires at temperatures between 300 and 340 degrees C in trioctylphosphine (TOP) and trioctylphosphine oxide (TOPO), and trioctylamine (TOA). Bi nanocrystals are observed at the nanowire tips, confirming their role as crystallization seeds. The nanowires are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and X-ray diffraction (XRD).
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IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USAIBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
Cho, KS
;
Talapin, DV
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机构:IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
Talapin, DV
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Gaschler, W
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机构:IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
Gaschler, W
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Murray, CB
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机构:IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
机构:
IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USAIBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
Cho, KS
;
Talapin, DV
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机构:IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
Talapin, DV
;
Gaschler, W
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机构:IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA
Gaschler, W
;
Murray, CB
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机构:IBM Corp, Thomas J Watson Res Ctr, Nanoscale Mat & Devices Grp, Yorktown Hts, NY 10598 USA