Bismuth nanocrystal-seeded III-V semiconductor nanowire synthesis

被引:78
作者
Fanfair, DD [1 ]
Korgel, BA [1 ]
机构
[1] Univ Texas, Dept Chem Engn, Texas Mat Inst, Ctr Nano & Mol Sci & Technol, Austin, TX 78712 USA
关键词
D O I
10.1021/cg0502587
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Bismuth (Bi) nanocrystals are used for solution-liquid-solid (SLS) synthesis of crystalline InAs, GaP, GaAs, and InP nanowires at temperatures between 300 and 340 degrees C in trioctylphosphine (TOP) and trioctylphosphine oxide (TOPO), and trioctylamine (TOA). Bi nanocrystals are observed at the nanowire tips, confirming their role as crystallization seeds. The nanowires are characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and X-ray diffraction (XRD).
引用
收藏
页码:1971 / 1976
页数:6
相关论文
共 60 条
[1]   Synthesis and characterization of colloidal InP quantum rods [J].
Ahrenkiel, SP ;
Micic, OI ;
Miedaner, A ;
Curtis, CJ ;
Nedeljkovic, JM ;
Nozik, AJ .
NANO LETTERS, 2003, 3 (06) :833-837
[2]   Field-effect transistors based on single semiconducting oxide nanobelts [J].
Arnold, MS ;
Avouris, P ;
Pan, ZW ;
Wang, ZL .
JOURNAL OF PHYSICAL CHEMISTRY B, 2003, 107 (03) :659-663
[3]  
AVIDSON FM, 2005, CHEM MATER, V17, P230
[4]   Designing PbSe nanowires and nanorings through oriented attachment of nanoparticles [J].
Cho, KS ;
Talapin, DV ;
Gaschler, W ;
Murray, CB .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (19) :7140-7147
[5]   Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].
Cui, Y ;
Lieber, CM .
SCIENCE, 2001, 291 (5505) :851-853
[6]   High performance silicon nanowire field effect transistors [J].
Cui, Y ;
Zhong, ZH ;
Wang, DL ;
Wang, WU ;
Lieber, CM .
NANO LETTERS, 2003, 3 (02) :149-152
[7]   Diameter-controlled synthesis of single-crystal silicon nanowires [J].
Cui, Y ;
Lauhon, LJ ;
Gudiksen, MS ;
Wang, JF ;
Lieber, CM .
APPLIED PHYSICS LETTERS, 2001, 78 (15) :2214-2216
[8]   Supercritical fluid-liquid-solid synthesis of gallium arsenide nanowires seeded by alkanethiol-stabilized gold nanocrystals [J].
Davidson, FM ;
Schricker, AD ;
Wiacek, RJ ;
Korgel, BA .
ADVANCED MATERIALS, 2004, 16 (07) :646-+
[9]   High-performance thin-film transistors using semiconductor nanowires and nanoribbons [J].
Duan, XF ;
Niu, CM ;
Sahi, V ;
Chen, J ;
Parce, JW ;
Empedocles, S ;
Goldman, JL .
NATURE, 2003, 425 (6955) :274-278
[10]   ZnO nanowire transistors [J].
Goldberger, J ;
Sirbuly, DJ ;
Law, M ;
Yang, P .
JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (01) :9-14