Lead zirconate titanate ferroelectric thin film capacitors: Effects of surface treatments on ferroelectric properties

被引：15

作者：

Chen, Ye ^{[1
]}

McIntyre, Paul C. ^{[1
]}

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 07期

关键词：

D O I：

10.1063/1.2769394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray photoelectron spectroscopy (XPS) revealed a lead-rich carbonatelike surface layer on polycrystalline lead zirconate titanate films grown by metal-organic chemical vapor deposition. In situ XPS studies indicated that lead originally present in the oxide film reacted with Pt during its deposition, forming a Ti/Zr-rich defective interfacial layer. Lead zirconate titanate films that underwent a nitric acid treatment, which effectively removed the surface layer, exhibited a stretched out of the hysteresis loop in the vicinity of the coercive field, consistent with the presence of a nonferroelectric passive layer. Reasonable agreement between the XPS-measured interface layer thickness and the thickness determined by electrical characterization was obtained. (C) 2007 American Institute of Physics.

引用

页数：3

共 14 条

[1] Stoichiometry and phase purity of Pb(Zr,Ti)O3 thin films deposited by metal organic chemical vapor deposition [J].

Aggarwal, S. ;

Udayakumar, K. R. ;

Rodriguez, J. A. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (06)

[2] Abrupt appearance of the domain pattern and fatigue of thin ferroelectric films [J].

Bratkovsky, AM ;

Levanyuk, AP .

PHYSICAL REVIEW LETTERS, 2000, 84 (14) :3177-3180

[3]

CHEN YM, 2005, MAT RES SOC FALL M S

[4] Z-contrast and electron energy loss spectroscopy study of passive layer formation at ferroelectric PbTiO3/Pt interfaces -: art. no. 262904 [J].

Fu, LF ;

Welz, SJ ;

Browning, ND ;

Kurasawa, M ;

McIntyre, PC .

APPLIED PHYSICS LETTERS, 2005, 87 (26) :1-3

[5] The interface screening model as origin of imprint in PbZrxTi1-xO3 thin films.: I.: Dopant, illumination, and bias dependence [J].

Grossmann, M ;

Lohse, O ;

Bolten, D ;

Boettger, U ;

Schneller, T ;

Waser, R .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) :2680-2687

[6]

Hansen M., 1958, CONSTITUTION BINARY, V2nd, P1096

[7] Polarization retention in Pb(Zr0.4Ti0.6)O3 capacitors with IrO2 top electrodes [J].

Kang, BS ;

Kim, DJ ;

Jo, JY ;

Noh, TW ;

Yoon, JG ;

Song, TK ;

Lee, YK ;

Lee, JK ;

Shin, S ;

Park, YS .

APPLIED PHYSICS LETTERS, 2004, 84 (16) :3127-3129

[8] Origin and implications of the observed rhombohedral phase in nominally tetragonal Pb(Zr0.35Ti0.65)O3 thin films [J].

Kelman, MB ;

McIntyre, PC ;

Gruverman, A ;

Hendrix, BC ;

Bilodeau, SM ;

Roeder, JF .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (08) :5210-5219

[9] Surface passivation and electronic structure characterization of PbTiO3 thin films and Pt/PbTiO3 interfaces -: art. no. 104110 [J].

Kurasawa, M ;

McIntyre, PC .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)

[10] FERROELECTRIC PROPERTIES AND FATIGUE OF PBZR0.51TI0.49O3 THIN-FILMS OF VARYING THICKNESS - BLOCKING LAYER MODEL [J].

LARSEN, PK ;

DORMANS, GJM ;

TAYLOR, DJ ;

VANVELDHOVEN, PJ .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) :2405-2413

← 1 2 →