Carbon nitride deposited using energetic species: A review on XPS studies

被引:417
作者
Ronning, C
Feldermann, H
Merk, R
Hofsass, H
Reinke, P
Thiele, JU
机构
[1] Univ Konstanz, Fak Phys, D-78457 Constance, Germany
[2] Univ Basel, Inst Phys, CH-4056 Basel, Switzerland
[3] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA
关键词
D O I
10.1103/PhysRevB.58.2207
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper reviews x-ray photoelectron spectroscopy studies on carbon nitride (CN) and reports on results obtained from CN thin films prepared by mass selected ion-beam deposition. The core-level spectra of samples deposited at room temperature show that nitrogen is incorporated into the amorphous network in two different bonding configurations; carbon has three main bonding configurations whose relative contributions vary as a function of the nitrogen content. For samples deposited at elevated temperatures an ordering of the amorphous CN network towards a crystalline graphitelike structure is observed. Furthermore, both deposition at elevated temperatures (350 degrees C) and post-deposition ion irradiation have a strong influence on the bonding configuration in the CN films. Based on these results and the results reported in the reviewed literature a picture of the microstructure of carbon nitride deposited using energetic species is developed.
引用
收藏
页码:2207 / 2215
页数:9
相关论文
共 65 条
[1]  
BADDING JV, IN PRESS CHEM MAT
[2]   PHYSICAL-PROPERTIES OF THIN CARBON NITRIDE FILMS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE ASSISTED VAPOR-DEPOSITION [J].
BOUSETTA, A ;
LU, M ;
BENSAOULA, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1995, 13 (03) :1639-1643
[3]   3,5,11,13-TETRAAZACYCL[3.3.3]AZINE - THEORETICAL (ABINITIO) AND EXPERIMENTAL (X-RAY AND ULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY) STUDIES OF THE ELECTRONIC-STRUCTURE [J].
BOUTIQUE, JP ;
VERBIST, JJ ;
FRIPIAT, JG ;
DELHALLE, J ;
PFISTERGUILLOUZO, G ;
ASHWELL, GJ .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1984, 106 (16) :4374-4378
[4]   CARBON NITRIDE FILMS PRODUCED BY HIGH-ENERGY SHOCK PLASMA DEPOSITION [J].
BURSILL, LA ;
PENG, JL ;
GURARIE, VN ;
ORLOV, AV ;
PRAWER, S .
JOURNAL OF MATERIALS RESEARCH, 1995, 10 (09) :2277-2285
[5]  
CEDVALL RG, 1973, PHYS REV B, V7, P5313
[6]   Carbon transport in Si(001) and nucleation of diamond-like carbon layers during mass selected carbon ion beam deposition [J].
Christiansen, S ;
Albrecht, M ;
Frank, G ;
Strunk, HP ;
Ronning, C ;
Hofsass, H ;
Recknagel, E .
DIAMOND AND RELATED MATERIALS, 1998, 7 (01) :15-22
[7]   MANY-ELECTRON SINGULARITY IN X-RAY PHOTOEMISSION AND X-RAY LINE SPECTRA FROM METALS [J].
DONIACH, S ;
SUNJIC, M .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (02) :285-&
[8]   Carbon nitride thin films formed by low energy ion beam deposition with positive and negative ions [J].
Enders, B ;
Horino, Y ;
Tsubouchi, N ;
Chayahara, A ;
Kinomura, A ;
Fujii, K .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 121 (1-4) :73-78
[9]   FORMATION OF CARBON NITRIDE FILMS BY MEANS OF ION ASSISTED DYNAMIC MIXING (IVD) METHOD [J].
FUJIMOTO, F ;
OGATA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (3B) :L420-L423
[10]   An X-ray photoelectron spectroscopy study of carbon nitride films grown by low energy ion implantation [J].
Galan, L ;
Montero, I ;
Rueda, F .
SURFACE & COATINGS TECHNOLOGY, 1996, 83 (1-3) :103-108