Operational stability of electrophosphorescent devices containing p and n doped transport layers

被引:137
作者
D'Andrade, BW [1 ]
Forrest, SR
Chwang, AB
机构
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] Universal Display Corp, Ewing, NJ 08618 USA
关键词
D O I
10.1063/1.1624473
中图分类号
O59 [应用物理学];
学科分类号
摘要
The operational stability of low-operating voltage p-i-n electrophosphorescent devices containing fac-tris(2-phenylpyridine) iridium as the emissive dopant is investigated. In these devices, Li-doped 4,7-diphenyl-1,10-phenanthroline (BPhen) served as an n-type electron transport layer, or as an undoped hole blocking layer (HBL), and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane doped 4,4('),4(')-tris(3-methylphenylphenylamino) triphenylamine served as a p-type hole transport layer. The glass transition temperature of BPhen can be increased by the addition of aluminum(III)bis(2-methyl-8-quinolinato)4-phenylphenolate (BAlq), resulting in improved morphological stability, thereby reducing device degradation. When thermally stable BAlq was used as a HBL in both p-i-n and undoped devices, the extrapolated operational lifetime (normalized to an initial luminance of 100 cd/m(2)) of the p-i-n and undoped devices are 18 000 and 60 000 h, respectively, indicating that the presence of p and n dopants can accelerate device degradation. (C) 2003 American Institute of Physics.
引用
收藏
页码:3858 / 3860
页数:3
相关论文
共 18 条
[1]   Degradation mechanism of small molecule-based organic light-emitting devices [J].
Aziz, H ;
Popovic, ZD ;
Hu, NX ;
Hor, AM ;
Xu, G .
SCIENCE, 1999, 283 (5409) :1900-1902
[2]   RELIABILITY AND DEGRADATION OF ORGANIC LIGHT-EMITTING DEVICES [J].
BURROWS, PE ;
BULOVIC, V ;
FORREST, SR ;
SAPOCHAK, LS ;
MCCARTY, DM ;
THOMPSON, ME .
APPLIED PHYSICS LETTERS, 1994, 65 (23) :2922-2924
[3]   Degradation mechanism of phosphorescent-dye-doped polymer light-emitting diodes [J].
Chang, SC ;
He, G ;
Chen, FC ;
Guo, TF ;
Yang, Y .
APPLIED PHYSICS LETTERS, 2001, 79 (13) :2088-2090
[4]   Organic light-emitting diodes with a bipolar transport layer [J].
Choong, VE ;
Shi, S ;
Curless, J ;
Shieh, CL ;
Lee, HC ;
So, F ;
Shen, J ;
Yang, J .
APPLIED PHYSICS LETTERS, 1999, 75 (02) :172-174
[5]   Graded mixed-layer organic light-emitting devices [J].
Chwang, AB ;
Kwong, RC ;
Brown, JJ .
APPLIED PHYSICS LETTERS, 2002, 80 (05) :725-727
[6]   Thermally induced failure mechanisms of organic light emitting device structures probed by X-ray specular reflectivity [J].
Fenter, P ;
Schreiber, F ;
Bulovic, V ;
Forrest, SR .
CHEMICAL PHYSICS LETTERS, 1997, 277 (5-6) :521-526
[7]   Ultrathin organic films grown by organic molecular beam deposition and related techniques [J].
Forrest, SR .
CHEMICAL REVIEWS, 1997, 97 (06) :1793-1896
[8]   Low-voltage organic electroluminescent devices using pin structures [J].
Huang, JS ;
Pfeiffer, M ;
Werner, A ;
Blochwitz, J ;
Leo, K ;
Liu, SY .
APPLIED PHYSICS LETTERS, 2002, 80 (01) :139-141
[9]   High operational stability of electrophosphorescent devices [J].
Kwong, RC ;
Nugent, MR ;
Michalski, L ;
Ngo, T ;
Rajan, K ;
Tung, YJ ;
Weaver, MS ;
Zhou, TX ;
Hack, M ;
Thompson, ME ;
Forrest, SR ;
Brown, JJ .
APPLIED PHYSICS LETTERS, 2002, 81 (01) :162-164
[10]  
Loy DE, 2002, ADV FUNCT MATER, V12, P245, DOI 10.1002/1616-3028(20020418)12:4<245::AID-ADFM245>3.0.CO