Defect structure of Sn-doped CdTe

被引：21

作者：

Franc, J

Fielderle, M

Babentsov, V

Fauler, A

Benz, KW

James, R

机构：

[1] Charles Univ Prague, Inst Phys, CZ-12116 Prague 2, Czech Republic

[2] Univ Freiburg, Inst Kristallog, D-79104 Freiburg, Germany

[3] Brookhaven Natl Lab, Upton, NY 11973 USA

[4] Inst Semicond Phys, UA-252028 Kiev, Ukraine

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2003年 / 32卷 / 07期

关键词：

Bridgman technique; cadmium compounds; semiconducting II-VI materials;

D O I：

10.1007/s11664-003-0069-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A complex investigation of defect structure of high-resistivity, Sn-doped CdTe grown by vertical-gradient freeze and Bridgman methods by a number of optical, photoelectrical, and electrical methods was performed. High-resistive and photosensitive material, potentially interesting for fabrication of x- and gamma-ray detectors, was produced in 80% of the crystal volume. A model of energy levels dominating the recombination processes in the material was elaborated, where the role of Sn and Fe-related as well as native defects (Cd vacancy) is discussed.

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收藏

页码：772 / 777

页数：6

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