Modified compensation model of CdTe

被引：198

作者：

Fiederle, M

Eiche, C

Salk, M

Schwarz, R

Benz, KW

Stadler, W

Hofmann, DM

Meyer, BK

机构：

[1] Univ Freiburg, Inst Kristallog, D-79104 Freiburg, Germany

[2] Tech Univ Munich, Phys Dept E 16, D-85747 Garching, Germany

[3] Univ Freiburg, Freiburger Mat Forschungszentrum, D-79104 Freiburg, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 12期

关键词：

D O I：

10.1063/1.368874

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The traditional compensation model to explain the high resistivity properties of CdTe is based on the presence of a deep acceptor level of the cadmium vacancy in the middle of the band gap. A new compensation model based on a deep intrinsic donor level is presented. The compensation model is used together with an appropriate segregation model to calculate axial distributions of resistivity which are compared with spatially resolved resistivity measurements. The Te-antisite defect is discussed as a possible origin cause of this intrinsic defect, which is also supported by theoretical calculations. (C) 1998 American Institute of Physics. [S0021-8979(98)02224-5].

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页码：6689 / 6692

页数：4

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