Electronic structure of Y2-xCaxBaNiO5 from photoemission and inverse photoemission

被引:29
作者
Maiti, K [1 ]
Sarma, DD
机构
[1] Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India
[2] Indian Inst Sci, Jawaharlal Nehru Ctr Adv Sci Res, Bangalore 560012, Karnataka, India
来源
PHYSICAL REVIEW B | 1998年 / 58卷 / 15期
关键词
D O I
10.1103/PhysRevB.58.9746
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the electronic structure of a one-dimensional spin-1 system, Y2BaNiO5, and hole-doped Y2-xCaxBaNiO5 for x=0.2 and 0.4, employing photoemission and inverse photoemission spectroscopies. Y2BaNiO5 has a charge excitation gap of about 2.3 eV. Hole doping via Ca substitution in this system introduces new localized states within this gap. The existence of a finite gap (similar to 0.6 eV), even in doped compounds with a variable-range-hopping transport, indicates the importance of correlation effects and disorder in determining the electronic structure in this system. [S0163-1829(98)01739-1].
引用
收藏
页码:9746 / 9751
页数:6
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