Al2O3-Based RRAM Using Atomic Layer Deposition (ALD) With 1-μA RESET Current

被引：137

作者：

Wu, Yi ^{[1
]}

Lee, Byoungil ^{[1
]}

Wong, H. -S. Philip ^{[1
,2
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 12期

基金：

美国国家科学基金会;

关键词：

Al2O3; atomic layer deposition (ALD); resistive random access memory (RRAM); resistive switching; LOW-POWER; FILMS;

D O I：

10.1109/LED.2010.2074177

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al2O3-based RRAM devices were fabricated using atomic layer deposition under 100 degrees C and 300 degrees C deposition temperatures, respectively, and their resistance-switching behaviors were investigated. Both devices show unipolar switching if the top electrode (TE) is made of Ti/Al, whereas the bipolar phenomenon is observed when TE is pure aluminum. Devices fabricated at higher temperature give better uniformity and higher resistance ratio. Ultralow RESET current (similar to 1 mu A) was obtained, together with adequate voltage margin.

引用

页码：1449 / 1451

页数：3

共 14 条

[1] Current switching of resistive states in magnetoresistive manganites [J].