Compliant interfaces: A mechanism for relaxation of dislocation pile-ups in a sheared single crystal

被引:24
作者
Danas, K. [1 ]
Deshpande, V. S. [1 ]
Fleck, N. A. [1 ]
机构
[1] Univ Cambridge, Dept Engn, Ctr Micromech, Cambridge CB2 1PZ, England
基金
英国工程与自然科学研究理事会;
关键词
Discrete dislocations; Size effects; Strain-gradient plasticity; Interfaces; Crystal plasticity; PLASTICITY; DEFORMATION; FLOW;
D O I
10.1016/j.ijplas.2010.03.008
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
Discrete dislocation plasticity models and strain-gradient plasticity theories are used to investigate the role of interfaces in the elastic-plastic response of a sheared single crystal. The upper and lower faces of a single crystal are bonded to rigid adherends via interfaces of finite thickness. The sandwich system is subjected to simple shear, and the effect of thickness of crystal layer and of interfaces upon the overall response are explored. When the interface has a modulus less than that of the bulk material, both the predicted plastic size effect and the Bauschinger effect are considerably reduced. This is due to the relaxation of the dislocation stress field by the relatively compliant surface layer. On the other hand, when the interface has a modulus equal to that of the bulk material a strong size effect in hardening as well as a significant reverse plasticity are observed in small specimens. These effects are attributed to the energy stored in the elastic fields of the geometrically necessary dislocations (GNDs). (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1792 / 1805
页数:14
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