Fabrication of a single-electron inverter in multiwall carbon nanotubes

被引：56

作者：

Ishibashi, K

Tsuya, D

Suzuki, M

Aoyagi, Y

机构：

[1] RIKEN, Inst Phys & Chem Res, Semicond Lab, Wako, Saitama 3510198, Japan

[2] Chiba Univ, Dept Mat Sci, Chiba 2368522, Japan

[3] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 227, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 19期

关键词：

D O I：

10.1063/1.1572537

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A single-electron inverter based on the Coulomb blockade effects has been fabricated in multiwalled carbon nanotubes, by using the Ar irradiation method for the tunnel barrier formation in the quantum dots. The device characteristics were measured at 2.6 K, and an indication of inverter-like transfer characteristics has been obtained. The performance of the device was not completely satisfactory for the inverter operation in terms of the voltage gain and the voltage swing, but the present technique turns out to be useful for the fabrication of single-electron logic devices in carbon nanotubes. (C) 2003 American Institute of Physics.

引用

页码：3307 / 3309

页数：3

共 13 条

[1] Single-electron logic device based on the binary decision diagram [J].