Tunnel barrier formation using argon-ion irradiation and single quantum dots in multiwall carbon nanotubes

被引：69

作者：

Suzuki, M

Ishibashi, K

Toratani, K

Tsuya, D

Aoyagi, Y

机构：

[1] RIKEN, Inst Phys & Chem Res, Semicond Lab, Wako, Saitama 3510198, Japan

[2] Chiba Univ, Dept Mat Sci, Inage Ku, Chiba 2368522, Japan

[3] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 227, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 12期

关键词：

D O I：

10.1063/1.1507608

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Argon-ion irradiation has been used to form a tunnel barrier in multiwall carbon nanotubes and single quantum dots have been fabricated with this technique. The periodic Coulomb diamonds have been shown at 10 K and the periodic Coulomb oscillations have been observed up to around 80 K. (C) 2002 American Institute of Physics.

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页码：2273 / 2275

页数：3

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