Fabrication of single and coupled quantum dots in single-wall carbon nanotubes

被引:36
作者
Suzuki, M
Ishibashi, K
Ida, T
Tsuya, D
Toratani, K
Aoyagi, Y
机构
[1] RIKEN, Inst Phys & Chem Res, Semicond Lab, Wako, Saitama 3510198, Japan
[2] Toyo Univ, Dept Elect & Elect Engn, Kawagoe, Saitama 3508585, Japan
[3] Japan Sci & Technol, CREST, Kawaguchi, Saitama 3320012, Japan
[4] Chiba Univ, Dept Mat Sci, Inage Ku, Yokohama, Kanagawa 2368522, Japan
[5] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Midori Ku, Yokohama, Kanagawa 2268502, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 06期
关键词
D O I
10.1116/1.1415505
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We describe our recent experimental results on the fabrication of single and coupled quantum dots in single-wall carbon nanotubes (SWNTs). As well as our standard method to fabricate electrical contacts on individual SWNTs, an attempt to position them at a desired place is described. For the coupled quantum dot formation a SiO2 layer has been deposited on top of SWNTs, and the transport result which suggests their formation is shown. (C) 2001 American Vacuum Society.
引用
收藏
页码:2770 / 2774
页数:5
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