Chemical profiling of single nanotubes:: Intramolecular p-n-p junctions and on-tube single-electron transistors

被引:99
作者
Kong, J [1 ]
Cao, J
Dai, HJ
Anderson, E
机构
[1] Stanford Univ, Dept Chem, Stanford, CA 94305 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
关键词
D O I
10.1063/1.1431402
中图分类号
O59 [应用物理学];
学科分类号
摘要
Electrical transport properties of intramolecular p-n-p junctions formed on individual semiconducting carbon nanotubes are reported. Chemical dopant "profiling" along the length of a nanotube divides the nanotube into two p-doped sections and a central n-doped section. The double p-n junctions formed on the nanotube dictate the electrical characteristics of the system. Well-defined and highly reproducible single-electron transistors with much smaller size than the geometrical length of the nanotube are obtained. (C) 2002 American Institute of Physics.
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收藏
页码:73 / 75
页数:3
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