Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes

被引：66

作者：

Hamaya, K.

Kitabatake, M.

Shibata, K.

Jung, M.

Kawamura, M.

Hirakawa, K.

Machida, T.

Taniyama, T.

Ishida, S.

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

[3] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538505, Japan

[4] Univ Tokyo, Inst Nano Quantum Informat Elect, Tokyo, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 23期

关键词：

D O I：

10.1063/1.2820445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a laterally fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N=3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gradually reduced, and then the Kondo effect is almost restored at B=1.2 T. This means that, in the Kondo regime, an inverse effective magnetic field of B similar to 1.2 T can be applied to the QD in the parallel magnetic configuration of the ferromagnetic electrodes. (c) 2007 American Institute of Physics.

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页数：3

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