Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

被引：80

作者：

Hamaya, K.

Masubuchi, S.

Kawamura, M.

Machida, T.

Jung, M.

Shibata, K.

Hirakawa, K.

Taniyama, T.

Ishida, S.

Arakawa, Y.

机构：

[1] Univ Tokyo, Inst Ind Sci, Dept Fundamental Engn, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Ind Sci, Dept Elect & Informat, Meguro Ku, Tokyo 1538505, Japan

[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[4] Univ Tokyo, Inst Ind Sci, Nanoelect Collaborat Res Ctr, Meguro Ku, Tokyo 1538505, Japan

[5] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 05期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2435957

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.

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页数：3

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